PART |
Description |
Maker |
PBRP123YT |
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 10 kOhm PNP 800 mA, 40 V BISS RET; R1 = 2.2 kW, R2 = 10 kW
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NXP Semiconductors
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PBSS5160U PBSS5160U115 |
60 V, 1 A PNP low VCEsat (BISS) transistor; Package: SOT323 (SC-70); Container: Tape reel smd 800 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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NXP Semiconductors N.V.
|
PBSS5160DS PBSS5160DS115 PBSS5160DS-15 |
60 V, 1 A PNP/PNP low VCEsat (BISS) transistor 60 V, 1 A PNP low VCEsat (BISS) transistor; Package: SOT457 (SC-74); Container: Tape reel smd 1000 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
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NXP Semiconductors N.V.
|
PBSS5130T |
30 V; 1 A PNP low VCEsat (BISS) transistor 30伏,1PNP型低饱和压降(BISS)晶体管
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NXP Semiconductors N.V.
|
2SA1078 |
SILICON PNP RING EMITTER TRANSISTOR (RET)
|
Fujitsu Microelectronics FUJITSU[Fujitsu Media Devices Limited]
|
PBRN123E PBRN123EK PBRN123ES PBRN123ET |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 2.2 kOhm NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k? R2 = 2.2 k? NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 2.2 k??
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NXP Semiconductors
|
PBRN113Z PBRN113ZK PBRN113ZS PBRN113ZT |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kOhm, R2 = 10 kOhm NPN 800 mA, 40 V BISS RETs; R1 = 1 k? R2 = 10 k? NPN 800 mA, 40 V BISS RETs; R1 = 1 k搂?, R2 = 10 k搂?
|
NXP Semiconductors
|
PDTA114EU.115 |
PNP Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD) plastic packages.
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NXP Semiconductors
|
PBSS304PX |
60 V, 4.2 A PNP low V_CEsat (BISS) transistor 60 V, 4.2 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
|
PBSS4032SP |
4.8A PNP/PNP Low V_CEsat (BISS) Transistor
|
Philips Semiconductors
|
PBLS4003D |
40 V PNP BISS loadswitch
|
NXP Semiconductors
|
PBLS4001V PBLS4001Y |
40 V PNP BISS loadswitch
|
NXP Semiconductors N.V.
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